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HiPerFASTTM IGBT with Diode
Combi Pack
IXGH 30N60BU1 IXGT 30N60BU1
VCES IC25 VCE(sat) tfi
TO-268 (IXGT)
= 600 V = 60 A = 1.8 V = 100 ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 33 Clamped inductive load, L = 100 H TC = 25C
Maximum Ratings 600 600 20 30 60 30 120 ICM = 60 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 1.13/10 TO-268 TO-247 AD 4 6 V V V V A A A A
G = Gate, E = Emitter,
G E C (TAB)
TO-247 AD
C (TAB) G C E C = Collector, TAB = Collector
W C C C C Nm/lb.in. g g Features International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD High frequency IGBT and antiparallel FRED in one package High current handling capability Newest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages Space savings (two devices in one package) High power density Optimized VCE(sat) and switching speeds for medium frequency applications
97501E (02/02)
Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, TO-247 AD
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 0.072 2.5 -0.286 500 3 100 TJ = 150C 1.8 2.0 5.5 V %/K V %/K A mA nA V V
BVCES VGE(th) ICES IGES VCE(sat) VCE(sat)
IC = 750A, VGE = 0 V BVCES temperature coefficient IC = 250 A, VCE = VGE VGE(th) temperature coefficient VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC IC = IC110, VGE = 15 V = IC110, VGE = 15 V TJ = 25C TJ = 150C
(c) 2002 IXYS All rights reserved
IXGH 30N60BU1 IXGT 30N60BU1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 25 2710 VCE = 25 V, VGE = 0 V, f = 1 MHz 240 50 110 IC = IC110, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC110, VGE = 15 V, L = 100 H, VCE = 0.8 VCES, RG = Roff = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 150C IC = IC110, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = Roff = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 22 40 25 30 130 100 1.0 25 35 1 200 230 2.5 220 190 150 35 75 S pF pF pF nC nC nC ns ns ns ns
e P
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC110; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
Dim.
2.0 mJ ns ns mJ ns ns mJ 0.62 K/W K/W
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-247 AA (D3 PAK)
0.25
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.6 10 35 15 50 V A ns
IF = IC110, VGE = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IC110, VGE = 0 V, -diF/dt = 240 A/s VR = 360 V IF = 1 A; -di/dt = 100 A/s; VR = 30 V
1 K/W
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
IXGH 30N60BU1 IXGT 30N60BU1
Fig. 1. Saturation Voltage Characteristics
100
TJ = 25C
Fig. 2. Extended Output Characteristics
200
TJ = 25C VGE = 15V
11V 13V
80
IC - Amperes
IC - Amperes
60 40 20
VGE = 15V 13V 11V 9V 7V
160
9V
120 80
7V
40
5V
5V
0 0 1 2 3 4 5
0
0
2
4
6
8
10
VCE - Volts
VCE - Volts
Fig. 3. Saturation Voltage Characteristics
100
TJ = 150C
1.6
VGE = 15V 13V 11V 9V
7V
Fig. 4. Temperature Dependence of VCE(sat)
VGE = 15V IC = 60A
VCE (sat) - Normalized
80
1.4 1.2
IC = 30A
IC - Amperes
60 40 20
5V
1.0 0.8
IC = 15A
0 0 1 2 3 4 5
0.6 25
50
75
100
125
150
VCE - Volts
TJ - Degrees C
Fig. 5. Admittance Curves
100 80 Capacitance - pF
VCE = 10V
Fig. 6. Temperature Dependence of BVDSS & VGE(th)
10000
f = 1Mhz Ciss
IC - Amperes
1000
60 40
TJ = 150C
100
Coss
20
TJ = 25C
Crss
0 3 4 5 6 7 8 9 10
10 0 5 10 15 20 25 30 35 40
VGE - Volts
VCE-Volts
(c) 2002 IXYS All rights reserved
IXGH 30N60BU1 IXGT 30N60BU1
Fig. 7. Dependence of EOFF and EOFF on IC.
4
TJ = 150C
Fig. 8. Dependence of EOFF on RG.
10
TJ = 150C
8
RG = 4.7
8
E(ON) - millijoules
6
E(OFF)
E(ON) - millijoules
3
IC = 60A
E(OFF) - milliJoules
6
2
E(ON)
4
4
IC = 30A IC = 15A
1
2
2
0
0 20 40 60
0 80
0
0
10
20
30
40
50
60
IC - Amperes
RG - Ohms
Fig. 9. Gate Charge
18 15
IC = 30A VCE = 360V
Fig. 10. Turn-off Safe Operating Area
100 60
VGE - Volts
12 9 6 3 0 0 25 50 75 100 125 150 175
IC - Amperes
10
TJ = 150C
RG = 4.7 dV/dt < 5V/ns
1
0.1 0 100 200 300 400 500 600
Qg - nanocoulombs
VCE - Volts
Fig. 11. IGBT Transient Thermal Resistance
1
D=0.5 D=0.2
ZthJC (K/W)
0.1 D=0.1
D=0.05 D=0.02 D=0.01 Single pulse
0.01
D = Duty Cycle
0.001 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
IXGH 30N60BU1 IXGT 30N60BU1
Fig. 12. Forward current versus voltage drop. Fig. 13. Recovery charge versus -diF/dt. Fig. 14. Peak reverse current versus -diF/dt.
Fig. 15. Dynamic parameters versus junction temperature.
Fig. 16. Reverse recovery time vs -diF/dt.
Fig. 17. Forward voltage recovery and time versus -diF/dt.
Fig. 18. Transient thermal resistance junction to case.
(c) 2002 IXYS All rights reserved

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